首站-论文投稿智能助手
典型文献
Enhanced proton irradiation resistance in Cs-doped CH3NH3PbI3 films and solar cells
文献摘要:
Mixed-cation perovskite solar cells have attracted tremendous attention in space applications due to their excellent power conversion efficiency(PCE)and stability to light and heat.Although the evolution of photovoltaic performance in different space environments has been investigated,the role of inorganic cesium ions(Cs+)in the enhancement of irradiation resistance needs to be further clarified.Herein,the structure and performance evolution of Cs-doped CH3NH3PbI3(MAPbI3)films and planar heterojunction devices under proton irradiation up to 1 x 1016 p cm-2 were studied.5%of Cs+doping can increase the cohesive energy of MAPbI3 and effectively alleviate the lattice strain induced by proton irradiation,thereby enhancing the crystallinity and stability of films.The bandgap changes of irradiated Cso.05MAo.95PbI3 films under the identical fluence were only one third of that of MAPbI3 films.Upon irra-diation under the fluence of 1 x 1014 p cm2,the density of trap states in the undoped and 5%Cs-doped films increased by 71%and 9%,respectively,and the average PCE of 20 corresponding devices decreased only by 12%and 9%,respectively.This proves that the replacement of organic methylamine ion with inor-ganic cesium ion contributes to the improvement of MAPbI3 resistance to proton irradiation,thus con-firming the application prospects of mixed-cation or all-inorganic perovskite solar cells in spacecraft.
文献关键词:
作者姓名:
Pan Luo;Xue-Yin Sun;Hao Jiang;Li Yang;Yang Li;Wen-Zhu Shao;Liang Zhen;Cheng-Yan Xu
作者机构:
School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,Heilongjiang,China;MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing,Harbin Institute of Technology,Harbin 150080,Heilongjiang,China;National Key Laboratory for Precision Hot Processing of Metals,Harbin Institute of Technology,Harbin 150001,Heilongjiang,China;Sauvage Laboratory for Smart Materials,School of Materials Science and Engineering,Harbin Institute of Technology(Shenzhen),Shenzhen 518055,Guangdong,China
文献出处:
引用格式:
[1]Pan Luo;Xue-Yin Sun;Hao Jiang;Li Yang;Yang Li;Wen-Zhu Shao;Liang Zhen;Cheng-Yan Xu-.Enhanced proton irradiation resistance in Cs-doped CH3NH3PbI3 films and solar cells)[J].能源化学,2022(06):261-269
A类:
Cs+doping,Cso,05MAo,95PbI3
B类:
Enhanced,proton,irradiation,resistance,CH3NH3PbI3,films,solar,cells,Mixed,perovskite,have,attracted,tremendous,attention,applications,due,their,excellent,power,conversion,efficiency,PCE,stability,light,heat,Although,evolution,photovoltaic,performance,different,environments,has,been,investigated,role,inorganic,cesium,enhancement,needs,further,clarified,Herein,structure,MAPbI3,planar,heterojunction,devices,under,up,were,studied,can,cohesive,energy,effectively,alleviate,lattice,strain,induced,thereby,enhancing,crystallinity,bandgap,changes,irradiated,identical,fluence,only,one,third,that,Upon,density,trap,states,undoped,increased,respectively,average,corresponding,decreased,This,proves,replacement,methylamine,contributes,improvement,thus,firming,prospects,mixed,spacecraft
AB值:
0.480343
相似文献
Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells
Shunliang Gao;Xiaohui Zhao;Qi Fu;Tianchi Zhang;Jun Zhu;Fuhua Hou;Jian Ni;Chengjun Zhu;Tiantian Li;Yanlai Wang;Vignesh Murugadoss;Gaber A.M.Mersal;Mohamed M.Ibrahim;Zeinhom M.El-Bahy;Mina Huang;Zhanhu Guo-The Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,College of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China;Department of Electronic Science and Technology,School of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China;Advanced Materials Division,Engineered Multifunctional Composites(EMC)Nanotech LLC,Knoxville,TN 37934,United States;Integrated Composites Laboratory(ICL),Department of Chemical and Bimolecular Engineering,University of Tennessee,Knoxville,TN 37996,United States;Department of Chemistry,College of Science,Taif University,P.O.Box 11099,Taif 21944,Saudi Arabia;Department of Chemistry,Faculty of Science,Al-Azhar University,Nasr City 11884,Cairo,Egypt;College of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China
Trivalent Ni oxidation controlled through regulating lithium content to minimize perovskite interfacial recombination
Jin-Jin Zhao;Xiao Su;Zhou Mi;Ying Zhang;Yan-Jun Hu;Hua-Jun Guo;Yi-Nan Jiao;Yu-Xia Zhang;Yan Shi;Wei-Zhong Hao;Jing-Wei Wu;Yi Wang;Cun-Fa Gao;Guo-Zhong Cao-School of Materials Science and Engineering,School of Mechanical Engineering,Shijiazhuang Tiedao University,Shijiazhuang 050043,China;School of Materials Science and Engineering,Hebei Key Laboratory of Material Near Net Forming Technology,Hebei University of Science and Technology,Shijiazhuang 050018,China;State Key Laboratory of Mechanics and Control of Mechanical Structures,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;Department of Materials Science and Engineering,University of Washington,Seattle,WA 98195-2120,USA
Organic-semiconductor-assisted dielectric screening effect for stable and efficient perovskite solar cells
Haiyang Chen;Qinrong Cheng;Heng Liu;Shuang Cheng;Shuhui Wang;Weijie Chen;Yunxiu Shen;Xinqi Li;Haidi Yang;Heyi Yang;Jiachen Xi;Ziyuan Chen;Xinhui Lu;Hongzhen Lin;Yaowen Li;Yongfang Li-Laboratory of Advanced Optoelectronic Materials,Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices,College of Chemistry,Chemical Engineering and Materials Science,Soochow University,Suzhou 215123,China;Department of Physics,Chinese University of Hong Kong,Hong Kong 999077,China;i-Lab,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials,Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application,Soochow University,Suzhou 215123,China;Beijing National Laboratory for Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China
Low-cost polymer acceptors with noncovalently fused-ring backbones for efficient all-polymer solar cells
Xiaobin Gu;Yanan Wei;Xingzheng Liu;Na Yu;Laiyang Li;Ziyang Han;Jinhua Gao;Congqi Li;Zhixiang Wei;Zheng Tang;Xin Zhang;Hui Huang-College of Materials Science and Opto-Electronic Technology,Center of Materials Science and Optoelectronics Engineering,CAS Center for Excellence in Topological Quantum Computation,CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100049,China;Center for Advanced Low-dimension Materials,State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,College of Materials Science and Engineering,Donghua University,Shanghai 201620,China;CAS Key Laboratory of Nanosystem and Hierarchical Fabrication,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China
Chlorinated polymerized small molecule acceptor enabling ternary all-polymer solar cells with over 16.6%efficiency
Ke Hu;Jiaqi Du;Can Zhu;Wenbin Lai;Jing Li;Jingming Xin;Wei Ma;Zhanjun Zhang;Jinyuan Zhang;Lei Meng;Yongfang Li-School of Chemical Science,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing National Laboratory for Molecular Sciences,CAS Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory of Photochemical Conversion and Optoelectronic Materials,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049,China;Laboratory of Advanced Optoelectronic Materials,Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices,College of Chemistry,Chemical Engineering and Materials Science,Soochow University,Suzhou 215123,China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。