The combination of grating-based frequency-selective optical feedback mechanisms,such as distributed feedback(DFB)or distributed Bragg reflector(DBR)structures,with quantum dot(QD)gain materials is a main approach towards ultrahigh-performance semiconductor lasers for many key novel applications,as either stand-alone sources or on-chip sources in photonic integrated circuits.However,the fabrication of conventional buried Bragg grating structures on GaAs,GaAs/Si,GaSb,and other material platforms has been met with major material regrowth difficulties.We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable,reliable,and strong coupling between the grating and the optical mode.We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers.The resulting DFB laser arrays emit at pre-designed 0.8 THz local area network wavelength division multiplexing frequency intervals in the 1300 nm band with record performance parameters,including sidemode suppression ratios as high as 52.7 dB,continuous-wave output power of 26.6 mW(room temperature)and 6 mW(at 55℃),and ultralow relative intensity noise(RIN)of＜-165 dB/Hz(2.5-20 GHz).The devices are also capable of isolator-free operating under very high external reflection levels of up to-12.3 dB while maintaining high spectral purity and ultralow RIN qualities.These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints,which are thus universally applicable across different material platforms and wavelength bands.

ZHUOHUI YANG;ZHENGQING DING;LIN LIU;HANCHENG ZHONG;SHENG CAO;XINZHONG ZHANG;SHIZHE LIN;XIAOYING HUANG;HUADI DENG;YING YU;SIYUAN YU

State Key Laboratory of Optoelectronic Materials and Technologies,School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China

光子学研究（英文）

[1]ZHUOHUI YANG;ZHENGQING DING;LIN LIU;HANCHENG ZHONG;SHENG CAO;XINZHONG ZHANG;SHIZHE LIN;XIAOYING HUANG;HUADI DENG;YING YU;SIYUAN YU-.High-performance distributed feedback quantum dot lasers with laterally coupled dielectric gratings)[J].光子学研究（英文）,2022(05):1271-1279

sidemode

High,performance,distributed,feedback,quantum,dot,lasers,laterally,coupled,dielectric,gratings,combination,frequency,selective,optical,mechanisms,such,DFB,Bragg,reflector,DBR,structures,QD,gain,materials,approach,towards,ultrahigh,semiconductor,many,key,novel,applications,either,stand,alone,sources,chip,photonic,integrated,circuits,However,fabrication,conventional,buried,GaAs,Si,GaSb,other,platforms,has,been,major,regrowth,difficulties,We,report,introducing,that,allows,highly,controllable,reliable,strong,coupling,between,implement,loss,amorphous,silicon,alongside,InAs,layers,resulting,arrays,emit,designed,THz,local,area,network,wavelength,division,multiplexing,intervals,record,parameters,including,suppression,ratios,dB,continuous,output,power,mW,room,temperature,ultralow,relative,intensity,noise,RIN,GHz,devices,also,capable,isolator,free,operating,under,very,external,reflection,levels,while,maintaining,spectral,purity,qualities,These,results,validate,technologically,superior,potentially,cost,effective,fabricating,their,constraints,which,thus,universally,applicable,across,different,bands

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