典型文献
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
文献摘要：
Near-infrared electroluminescence of InGaN quantum dots(QDs)formed by controlled growth on photoelec-trochemical(PEC)etched QD templates is demonstrated.The QD template consists of PEC InGaN QDs with high density and controlled sizes,an AlGaN capping layer to protect the QDs,and a GaN barrier layer to planarize the surface.Scanning transmission electron microscopy(STEM)of Stranski-Krastanov(SK)growth on the QD template shows high-In-content InGaN QDs that align vertically to the PEC QDs due to localized strain.A high-Al-content Al0.9Ga0.1N capping layer prevents the collapse of the SK QDs due to intermixing or decomposition during higher temperature GaN growth as verified by STEM.Growth of low-temperature(830℃)p-type layers is used to complete the p-n junction and further ensure QD integrity.Finally,electroluminescence shows a sig-nificant wavelength shift(800 nm to 500 nm),caused by the SK QDs'tall height,high In content,and strong polarization-induced electric fields.
文献关键词：
中图分类号：
作者姓名：
XIONGLIANG WEI;SYED AHMED AL MUYEED;HAOTIAN XUE;ELIA PALMESE;RENBO SONG;NELSON TANSU;JONATHAN J.WIERER,JR.
作者机构：
Center for Photonics and Nanoelectronics,Department of Electrical and Computer Engineering,Lehigh University,Bethlehem,Pennsylvania 18015,USA;School of Electrical and Electronic Engineering,The University of Adelaide,Adelaide,SA 5005,Australia;Institute for Photonics and Advanced Sensing,The University of Adelaide,Adelaide,SA 5005,Australia
文献出处：
引用格式：
[1]XIONGLIANG WEI;SYED AHMED AL MUYEED;HAOTIAN XUE;ELIA PALMESE;RENBO SONG;NELSON TANSU;JONATHAN J.WIERER,JR.-.Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates)[J].光子学研究（英文）,2022(01):33-40
A类：
planarize,Stranski,Krastanov,intermixing
B类：
Near,infrared,electroluminescence,AlGaN,capped,InGaN,quantum,dots,formed,by,controlled,growth,photoelectrochemical,etched,templates,QDs,PEC,demonstrated,consists,density,sizes,capping,protect,barrier,surface,Scanning,transmission,electron,microscopy,STEM,SK,shows,content,that,align,vertically,due,localized,strain,Al0,9Ga0,1N,prevents,collapse,decomposition,during,higher,temperature,verified,Growth,low,type,layers,complete,junction,further,ensure,integrity,Finally,sig,nificant,wavelength,shift,caused,tall,height,strong,polarization,induced,electric,fields
AB值：
0.454632
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