典型文献
Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
文献摘要：
Spin defects in silicon carbide(SiC)with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention.Although room-temperature single-spin manipulation of colour centres in SiC has been demonstrated,the typically detected contrast is less than 2％,and the photon count rate is also low.Here,we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast(-30％)and a high photon count rate(150 kilo counts per second)under ambient conditions,which are competitive with the nitrogen-vacancy centres in diamond.Coupling between a single defect spin and a nearby nuclear spin is also observed.We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths.Since the high readout contrast is of utmost importance in many applications of quantum technologies,this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.
文献关键词：
中图分类号：
作者姓名：
Qiang Li;Jun-Feng Wang;Fei-Fei Yan;Ji-Yang Zhou;Han-Feng Wang;He Liu;Li-Ping Guo;Xiong Zhou;Adam Gali;Zheng-Hao Liu;Zu-Qing Wang;Kai Sun;Guo-Ping Guo;Jian-Shun Tang;Hao Li;Li-Xing You;Jin-Shi Xu;Chuan-Feng Li;Guang-Can Guo
作者机构：
CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education and School of Physics and Technology,Wuhan University,Wuhan 430072,China;Department of Atomic Physics,Budapest University of Technology and Economics,Budafoki út 8,H-1111 Hungary;Wigner Research Centre for Physics,Budapest 1121,Hungary;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 200050,China
文献出处：
引用格式：
[1]Qiang Li;Jun-Feng Wang;Fei-Fei Yan;Ji-Yang Zhou;Han-Feng Wang;He Liu;Li-Ping Guo;Xiong Zhou;Adam Gali;Zheng-Hao Liu;Zu-Qing Wang;Kai Sun;Guo-Ping Guo;Jian-Shun Tang;Hao Li;Li-Xing You;Jin-Shi Xu;Chuan-Feng Li;Guang-Can Guo-.Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast)[J].国家科学评论（英文版）,2022(05):84-93
A类：
divacancy,kilo
B类：
Room,temperature,coherent,manipulation,single,qubits,silicon,carbide,high,readout,contrast,Spin,defects,SiC,mature,wafer,scale,fabrication,micro,nano,processing,technologies,have,recently,drawn,considerable,attention,Although,room,colour,centres,has,been,demonstrated,typically,detected,less,than,photon,also,low,Here,present,spins,4H,counts,second,under,ambient,conditions,which,are,competitive,nitrogen,diamond,Coupling,between,nearby,nuclear,observed,We,further,provide,theoretical,explanation,analysing,levels,decay,paths,Since,utmost,importance,many,applications,quantum,this,work,might,open,new,territory,devices,advanced,properties,host,material
AB值：
0.577089
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