典型文献
Electro-lubrication in Janus transition metal dichalcogenide bilayers
文献摘要：
Lubrication induced by a vertical electric field or bias voltage is typically not applicable to two-dimensional(2D)van der Waals(vdW)crystals.By performing extensive first-principles calculations,we reveal that the interlayer friction and shear resistance of Janus transition metal dichalcogenide(TMD)MoXY(X/Y=S,Se,or Te,and X ≠ Y)bilayers under a constant normal force mode can be reduced by applying vertical electric fields.The maximum interlayer sliding energy barriers between AA and AB stacking of bilayers MoSTe,MoSeTe,and MoSSe decrease as the positive electric field increases because of the more significant counteracting effect from the electric field energy and the more significant enhancement in interlayer charge transfer in AA stacking.Meanwhile,the presence of negative electric fields decreases the interlayer friction of bilayer MoSTe,because the electronegativity difference between Te and S atoms reduces the interfacial atom charge differences between AA and AB stacking.These results reveal an electro-lubrication mechanism for the heterogeneous interfaces of 2D Janus TMDs.
文献关键词：
中图分类号：
作者姓名：
Hao LI;Yufeng GUO;Wanlin GUO
作者机构：
State Key Laboratory of Mechanics and Control of Mechanical Structures,MOE Key Laboratory for Intelligent Nano Materials and Devices,College of Aerospace Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China
文献出处：
引用格式：
[1]Hao LI;Yufeng GUO;Wanlin GUO-.Electro-lubrication in Janus transition metal dichalcogenide bilayers)[J].摩擦（英文）,2022(11):1851-1858
A类：
MoXY,MoSTe,MoSeTe
B类：
Electro,lubrication,Janus,transition,metal,dichalcogenide,bilayers,Lubrication,induced,by,vertical,electric,bias,voltage,typically,not,applicable,two,dimensional,2D,van,Waals,vdW,crystals,By,performing,extensive,first,principles,calculations,reveal,that,interlayer,friction,shear,resistance,under,constant,normal,force,mode,reduced,applying,fields,maximum,sliding,energy,barriers,between,AA,AB,stacking,MoSSe,positive,increases,because,more,significant,counteracting,effect,from,enhancement,charge,transfer,Meanwhile,presence,negative,decreases,electronegativity,atoms,reduces,interfacial,differences,These,results,mechanism,heterogeneous,interfaces,TMDs
AB值：
0.522528
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