典型文献
Mass transport induced structural evolution and healing of sulfur vacancy lines and Mo chain in monolayer MoS2
文献摘要:
Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional (2D) materials,and increasing demands are requested to find effective ways to realize the defect engineering,i.e.,tuning the defects and thus the materials' structure-property in a well-controlled way.Herein,we propose a novel method to tune the structures and config-urations of one-dimensional (1D) line defects in monolayer MoS2 via mass transport induced structural transformation.By using atomic-resolved annular dark-field scanning transmission electron microscopy (ADF-STEM),we demonstrate in situ that sulfur vacancy line defect can be healed locally into defect-free MoS2 lattice via the des-orption of Mo atoms from vacancy lines and adsorption into a moving Mo cluster.Furthermore,directional trans-port of Mo atoms (or Mo cluster) along the sulfur vacancy lines can induce the formation of Mo chains.Such a mass transport induced defect tuning provides more operational routes for the rational defect designing and property tuning in MoS2 as well as other related 2D materials.
文献关键词:
中图分类号:
作者姓名:
Xiao-Wei Wang;Lin-Fang Hou;Wei Huang;Xi-Biao Ren;Wei Ji;Chuan-Hong Jin
作者机构:
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Department of Physics,Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices,Renmin University of China,Beijing 100872,China;Hunan Institute of Advanced Sensing and Information Technology,Xiangtan University,Xiangtan 411105,China
文献出处:
引用格式:
[1]Xiao-Wei Wang;Lin-Fang Hou;Wei Huang;Xi-Biao Ren;Wei Ji;Chuan-Hong Jin-.Mass transport induced structural evolution and healing of sulfur vacancy lines and Mo chain in monolayer MoS2)[J].稀有金属(英文版),2022(01):333-341
A类:
urations
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AB值:
0.530341
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