Nanoscale ruthenium(Ru)-based materials are promising replacements for existing multilayered Cu inter-connects in integrated circuits.However,it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition.Here,we report the electrical resistivity and microstructure of electrode-posited Ru nanowires.We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters.Fur-thermore,we investigate the electrical properties of RuxCo1-x nanowires where x is 0.04-0.99 at.％as possible replacements of the current TaN barrier structures.Over the entire composition range,the re-sistivity values of alloys are much lower than that of the conventional TaN.Additionally,Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450℃heat treatment.Therefore,the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials,respectively.

Jun Hwan Moon;Seunghyun Kima;Taesoon Kim;Yoo Sang Jeon;Yanghee Kim;Jae-Pyoung Ahn;Young Keun Kim

Department of Materials Science and Engineering,Korea University,Seoul 02841,Republic of Korea;Institute of Engineering Reserch,Korea University,Seoul 02481,Republic of Korea;Advanced Analysis Center,Korea institute of Science and Technology,Seoul 02792,Republic of Korea;Research Resources Division,Korea Institute of Science and Technology,Seoul 02792,Republic of Korea

材料科学技术（英文版）

[1]Jun Hwan Moon;Seunghyun Kima;Taesoon Kim;Yoo Sang Jeon;Yanghee Kim;Jae-Pyoung Ahn;Young Keun Kim-.Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires)[J].材料科学技术（英文版）,2022(10):17-25

electrodeposited,damascene,RuxCo1,sistivity

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