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典型文献
Decoupling of thermoelectric transport performance of Ag doped and Se alloyed tellurium induced by carrier mobility compensation
文献摘要:
Alloying with Se is proved to be feasible to suppress the lattice thermal conductivity(κL)of tellurium by introducing multidimensional lattice defects.However,extra ionization impurity centers induced by Se alloying are harmful to the electric transport properties of the matrix.In this paper,we propose that the incorporation of Ag could successfully compensate the lost carrier mobility(μH)due to Se alloying through the regulation of microstructure,resulting in the higher power factor(PF)than that of samples without Ag.After composition optimization,the κL decreased from 1.29 W m-1 K-1 of Te0.99Sb0.01 to 1.05 W m-1 K-1 of Te0.94Ag0.02Se0.03Sb0.01 at 350 K,while the PF remained unchanged or even slightly increased.Benefit from the synergistic effect of carrier mobility compensation and phonon scattering,a maximum zT of 0.91 at 573 K and an average zT of 0.57(between 298 and 573 K)are achieved in Te0.94Ag0.02Se0.03Sb0.01.This work presents a new strategy for decoupling the thermal and electric param-eters of Te-based thermoelectric materials.
文献关键词:
作者姓名:
Yue Wu;Xiaofan Zhang;Boyi Wang;Jingxuan Liang;Zipei Zhang;Jiawei Yang;Ximeng Dong;Shuqi Zheng;Huai-zhou Zhao
作者机构:
State Key Laboratory of Heavy Oil Processing,College of New Energy and Materials,China University of Petroleum,Beijing 102249,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
引用格式:
[1]Yue Wu;Xiaofan Zhang;Boyi Wang;Jingxuan Liang;Zipei Zhang;Jiawei Yang;Ximeng Dong;Shuqi Zheng;Huai-zhou Zhao-.Decoupling of thermoelectric transport performance of Ag doped and Se alloyed tellurium induced by carrier mobility compensation)[J].材料科学技术(英文版),2022(06):71-79
A类:
Te0,99Sb0,94Ag0,02Se0,03Sb0
B类:
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AB值:
0.546668
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