Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO∶Ag/SiO2 bilayer based memristor that has exhibited a filamentary resistive switching with stable en-durance and long-term data retention ability.The memristor also exhibits a tunable resistance modula-tion under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.More-over,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-time-dependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observa-tions and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of-103 along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO∶Ag/SiO2/p++-Si memristor can be re-alized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.

Nasir Ilyas;Jingyong Wang;Chunmei Li;Hao Fu;Dongyang Li;Xiangdong Jiang;Deen Gu;Yadong Jiang;Wei Li

School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;School of Physics,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

材料科学技术（英文版）

[1]Nasir Ilyas;Jingyong Wang;Chunmei Li;Hao Fu;Dongyang Li;Xiangdong Jiang;Deen Gu;Yadong Jiang;Wei Li-.Controllable resistive switching of STO∶Ag/SiO2-based memristor synapse for neuromorphic computing)[J].材料科学技术（英文版）,2022(02):254-263

durance,SRDP,tetanic,electroforming,p++

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