典型文献
The Growth and Microstructure of GaAs Embedded with Al Nanocrystals
文献摘要：
The preparation and the microstructure of GaAs embedded with Al nanocrystals prepared by Laser molecular beam epitaxy were investigated. The microstructure of the sample was observed by transmission electron microscope. The reflection high-energy electron diffraction (RHEED) pattern varied from the stripe pattern to the spot pattern at the beginning of the Al nanocrystals growth, and then the spot pattern tended to change to the stripe pattern. There was a large lattice mismatch between Al and GaAs substrate, and Al formed three-dimensional islands on the GaAs substrate, which led to the RHEED transformation into the spot pattern. Otherwise, the dislocations would be formed between the GaAs layer and Al islands due to the large lattice mismatch. Meanwhile, there was some polycrystal of GaAs around the Al islands.
文献关键词：
中图分类号：
作者姓名：
WANG Xinming;CHEN Jie;ZENG Yong;LI Jia;ZHOU Minjie;WU Weidong;YAN Dawei
作者机构：
Laser Fusion Research Center,China Academy of Engineering Physics,Mianyang 621900,China
文献出处：
引用格式：
[1]WANG Xinming;CHEN Jie;ZENG Yong;LI Jia;ZHOU Minjie;WU Weidong;YAN Dawei-.The Growth and Microstructure of GaAs Embedded with Al Nanocrystals)[J].武汉理工大学学报（材料科学版）（英文版）,2022(06):1051-1055
A类：
B类：
Growth,Microstructure,GaAs,Embedded,Nanocrystals,preparation,microstructure,embedded,nanocrystals,prepared,by,Laser,molecular,beam,epitaxy,were,investigated,sample,was,observed,transmission,electron,microscope,reflection,high,energy,diffraction,RHEED,pattern,varied,from,stripe,spot,beginning,growth,then,tended,change,There,large,lattice,mismatch,between,substrate,formed,three,dimensional,islands,which,led,transformation,into,Otherwise,dislocations,would,layer,due,Meanwhile,there,some,polycrystal,around
AB值：
0.546062
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