典型文献
Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study
文献摘要：
Long-lasting constant loading commonly exists in silicon-based microelectronic contact and can lead to the appearance of plastic deformation. Stress relaxation behaviors of monocrystalline silicon coated with amorphous SiO2 film during nanoindentation are probed using molecular dynamics simulation by varying the indenter's size. The results show that the indentation force (stress) declines sharply at the initial and decreases almost linearly toward the end of holding for tested samples. The amount of stress relaxation of SiO2/Si samples indented with different indenters during holding increases with growing indenter size, and the corresponding plastic deformation characteristics are carefully analyzed. The deformation mechanism for confined amorphous SiO2 film is depicted based on the amorphous plasticity theories, revealing that the more activated shear transformation zones(STZs) and free volume within indented SiO2 film promote stress relaxation. The phase transformation takes place to monocrystalline silicon, the generated atoms of Si-Ⅱ and bct-5 phases within monocrystalline silicon substrate during holding are much higher than those for smaller indenter.
文献关键词：
中图分类号：
作者姓名：
CHEN Juan;FANG Liang;CHEN Huiqin;SUN Kun;HAN Jing
作者机构：
School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China;School of Me-chanical&Electrical Engineering&Xiamen University Tan Kah Kee College,Zhangzhou 363105,China;China State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049,China;School of Mechanical and Electrical Engineering,China University of Mining and Technology,Xuzhou 221116,China
文献出处：
引用格式：
[1]CHEN Juan;FANG Liang;CHEN Huiqin;SUN Kun;HAN Jing-.Indenter Size Effect on Stress Relaxation Behaviors of Surface-modified Silicon: A Molecular Dynamics Study)[J].武汉理工大学学报（材料科学版）（英文版）,2022(03):370-377
A类：
indented,indenters,STZs,bct
B类：
Indenter,Size,Effect,Stress,Relaxation,Behaviors,Surface,modified,Silicon,Molecular,Dynamics,Study,Long,lasting,constant,loading,commonly,exists,silicon,microelectronic,contact,can,lead,appearance,deformation,relaxation,behaviors,monocrystalline,coated,amorphous,SiO2,film,during,nanoindentation,probed,using,molecular,dynamics,simulation,by,varying,size,results,show,that,force,stress,declines,sharply,initial,decreases,almost,linearly,toward,end,holding,tested,samples,amount,different,increases,growing,corresponding,characteristics,carefully,analyzed,mechanism,confined,depicted,plasticity,theories,revealing,more,activated,shear,transformation,zones,free,volume,within,promote,takes,place,generated,atoms,phases,substrate,much,higher,than,those,smaller
AB值：
0.570696
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