This paper presents a low power con-sumption and low cost electrically erasable program-mable read-only memory(EEPROM)for radio frequency identification(RFID)tag chip.A read-write circuit with parallel input and serial output is proposed.Only one sensitive amplifier is used to read the data in memory,which can effectively reduce the power consumption of the read operation.Because the tag may be read or writ-ten while moving,the internal voltage may change in a wide range.Therefore,this paper designs a charge pump and its control circuit with wide voltage working range.The proposed EEPROM is integrated into an RFID tag chip and fabricated using a 180 nm complementary met-al-oxide semiconductor(CMOS)process.Experimental results show that the circuit can work in the input voltage range of 1 V to 1.8 V,and the minimum current of read operation and write operation is 0.68 μA and 30 μA respectively,which has the characteristic of low power consumption.

HU Jianguo;WANG Deming;WU Jing

School of Microelectronics Science and Technology,Sun Yat-sen University,Zhuhai 519082,China;School of Physics and Telecommunication Engineering,South China Normal University,Guangzhou 510006,China;Development Research Institute of Guangzhou Smart City,Guangzhou 510800,China

电子学报（英文）

[1]HU Jianguo;WANG Deming;WU Jing-.A 2 Kbits Low Power EEPROM for Passive RFID Tag IC)[J].电子学报（英文）,2022(01):18-24

Kbits,erasable

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