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典型文献
Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET
文献摘要:
Silicon carbide(SiC)material features a wide bandgap and high critical breakdown field intensity.It also plays an im-portant role in the high efficiency and miniaturization of power electronic equipment.It is an ideal choice for new power elec-tronic devices,especially in smart grids and high-speed trains.In the medium and high voltage fields,SiC devices with a block-ing voltage of more than 6.5 kV will have a wide range of applications.In this paper,we study the influence of epitaxial materi-al properties on the static characteristics of 6.5 kV SiC MOSFET.6.5 kV SiC MOSFETs with different channel lengths and JFET re-gion widths are manufactured on three wafers and analyzed.The FN tunneling of gate oxide,HTGB and HTRB tests are per-formed and provide data support for the industrialization process for medium/high voltage SiC MOSFETs.
文献关键词:
作者姓名:
Lixin Tian;Zechen Du;Rui Liu;Xiping Niu;Wenting Zhang;Yunlai An;Zhanwei Shen;Fei Yang;Xiaoguang Wei
作者机构:
State Key Laboratory of Advanced Power Transmission Technology,Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China;Key Laboratory of Semiconductor Material Sciences,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
引用格式:
[1]Lixin Tian;Zechen Du;Rui Liu;Xiping Niu;Wenting Zhang;Yunlai An;Zhanwei Shen;Fei Yang;Xiaoguang Wei-.Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET)[J].半导体学报(英文版),2022(08):77-83
A类:
HTGB
B类:
Influence,epitaxial,layer,structure,cell,electrical,performance,kV,SiC,Silicon,carbide,material,features,wide,bandgap,high,critical,breakdown,intensity,It,also,plays,im,portant,role,efficiency,miniaturization,power,electronic,equipment,ideal,choice,new,devices,especially,smart,grids,speed,trains,medium,voltage,fields,block,more,than,will,have,range,applications,this,paper,study,influence,properties,static,characteristics,MOSFETs,different,channel,lengths,JFET,gion,widths,are,manufactured,three,wafers,analyzed,FN,tunneling,gate,oxide,HTRB,tests,formed,provide,data,support,industrialization,process
AB值:
0.613895
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