Inverted perovskite solar cells(IPSCs)have attracted tremendous research interest in recent years due to their applica-tions in perovskite/silicon tandem solar cells.However,further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices.Herein,we demonstrate a facile atomic layer deposition(ALD)processed tin dioxide(SnO2)as an additional buffer layer for efficient and stable wide-bandgap IPSCs.The additional buf-fer layer increases the shunt resistance and reduces the reverse current saturation density,resulting in the enhancement of effi-ciency from 19.23％to 21.13％.The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V,short cir-cuit current density of 21.86 mA/cm2,and fill factor of 81.07％.More importantly,the compact and stable SnO2 film invests the IPSCs with superhydrophobicity,thus significantly enhancing the moisture resistance.Eventually,the target device can main-tain 90％of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20％-40％without encapsula-tion.The ALD-processed SnO2 provides a promising way to boost the efficiency and stability of IPSCs,and a great potential for perovskite-based tandem solar cells in the near future.

Bingbing Chen;Pengyang Wang;Ningyu Ren;Renjie Li;Ying Zhao;Xiaodan Zhang

Institute of Photoelectronic Thin Film Devices and Technology,Renewable Energy Conversion and Storage Center,Solar Energy Conversion Center,Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China;Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education,Tianjin 300350,China;Collaborative Innovation Center of Chemical Science and Engineering(Tianjin),Tianjin 300072,China;School of Physical Science and Technology,Inner Mongolia University,Key Laboratory of Semiconductor,Hohhot 010021,China

半导体学报（英文版）

[1]Bingbing Chen;Pengyang Wang;Ningyu Ren;Renjie Li;Ying Zhao;Xiaodan Zhang-.Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells)[J].半导体学报（英文版）,2022(05):73-79

IPSCs,buf,invests,encapsula

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