典型文献
Diamond semiconductor and elastic strain engineering
文献摘要:
Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond's electronic properties by the "elastic strain engineering" strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.
文献关键词:
中图分类号:
作者姓名:
Chaoqun Dang;Anliang Lu;Heyi Wang;Hongti Zhang;Yang Lu
作者机构:
Department of Mechanical Engineering,City University of Hong Kong,Hong Kong,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,China;Nano-Manufacturing Laboratory (NML),Shenzhen Research Institute of City University of Hong Kong,Shenzhen 518057,China
文献出处:
引用格式:
[1]Chaoqun Dang;Anliang Lu;Heyi Wang;Hongti Zhang;Yang Lu-.Diamond semiconductor and elastic strain engineering)[J].半导体学报(英文版),2022(02):39-50
A类:
traordinary
B类:
Diamond,elastic,strain,engineering,wide,bandgap,become,promising,candidate,next,generation,microelec,optoelectronics,due,its,numerous,advantages,over,conventional,semiconductors,including,ultrahigh,carrier,bility,thermal,conductivity,expansion,coefficient,breakdown,voltage,etc,Despite,these,properties,diamond,also,faces,various,challenges,before,being,practically,used,industry,This,review,begins,brief,summary,previous,efforts,model,construct,switching,diodes,power,frequency,field,effect,transistors,MEMS,NEMS,devices,operating,temperatures,Following,that,will,discuss,recent,developments,address,scalable,applications,emphasizing,synthesis,large,area,quality,CVD,films,difficulties,doping,Lastly,show,potential,solutions,modulate,by,strategy,which,sheds,light,future,photonics,quantum,systems
AB值:
0.659074
相似文献
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。