典型文献
Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition
文献摘要：
We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality MoS2 monolayer on the SiO2 substrate with large crystal size up to 110 μm.The large specific surface area of the pre-synthesized MoO3 flakes on the mica substrate compared to MoO3 powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Further-more,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality MoS2 monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the SiO2 substrate and is essential to further development of the TMDs-related integrated devices.
文献关键词：
中图分类号：
作者姓名：
Jia-Jun Ma;Kang Wu;Zhen-Yu Wang;Rui-Song Ma;Li-Hong Bao;Qing Dai;Jin-Dong Ren;Hong-Jun Gao
作者机构：
Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China;CAS Key Laboratory of Nanophotonic Materials and Devices,CAS Key Laboratory of Standardization and Measurement for Nano-technology,National Center for Nanoscience and Technology,Beijing 100190,China
文献出处：
引用格式：
[1]Jia-Jun Ma;Kang Wu;Zhen-Yu Wang;Rui-Song Ma;Li-Hong Bao;Qing Dai;Jin-Dong Ren;Hong-Jun Gao-.Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition)[J].中国物理B（英文版）,2022(08):203-209
A类：
Pauw
B类：
Monolayer,MoS2,high,mobility,grown,SiO2,substrate,by,two,step,chemical,vapor,deposition,We,report,novel,ambient,pressure,CVD,pathway,quality,monolayer,large,crystal,up,specific,surface,area,synthesized,MoO3,flakes,compared,powder,could,dramatically,reduce,consumption,source,electronic,information,inferred,from,four,probe,scanning,tunneling,microscope,4P,STM,image,explains,threshold,voltage,variations,type,behavior,observed,terminal,transport,measurements,Further,more,direct,van,also,confirms,its,relatively,carrier,Our,study,provides,reliable,which,is,confirmed,results,Such,methodology,key,toward,scale,growth,transition,metal,dichalcogenides,TMDs,essential,further,development,related,integrated,devices
AB值：
0.613237
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
